Current transport at the p-InP|poly(pyrrole) interface
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Abstract
The interface between the inorganic semiconductor p-type InP and the conjugated polymer poly(pyrrole) exhibits the electrical characteristics of a Schottky diode. Capacitance-voltage measurements yield an average barrier height of 0.62 ± 0.01 eV at temperature T =298 K. At the same temperature, the empirical quality factor, extracted from current-voltage measurements, is near unity. However, the current-voltage measurements show a deviation from thermionic emission theory as the temperature is reduced, as witnessed by the increase of the quality factor and the curvature in the Richardson plot. Such deviation is best explained by the barrier inhomogeneity model, in which the barrier becomes voltage dependent due to the interaction of a small low-barrier region with a higher surrounding potential, termed the pinch-off effect. Traditional current-voltage models, including image force lowering or an interfacial layer, cannot predict the temperature dependence of the current-voltage data, although thermionic field emission may facilitate current transport in the interfaces with a higher doped InP substrate. Furthermore, the probability of sufficiently energetic incident charge carriers crossing the interface, termed the transmission coefficient, is smaller than that observed in metal Schottky diodes.© 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Current transport at the p-InP|poly(pyrrole) interface</title><author><name sortKey="Jones, Frank E" uniqKey="Jones F">Frank E. Jones</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Daniels Hafer, Carrie" uniqKey="Daniels Hafer C">Carrie Daniels Hafer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Wood, Ben P" uniqKey="Wood B">Ben P. Wood</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Danner, Robert G" uniqKey="Danner R">Robert G. Danner</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Lonergan, Mark C" uniqKey="Lonergan M">Mark C. Lonergan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0312230</idno><date when="2001-07-15">2001-07-15</date><idno type="stanalyst">PASCAL 01-0312230 AIP</idno><idno type="RBID">Pascal:01-0312230</idno><idno type="wicri:Area/Main/Corpus">010E30</idno><idno type="wicri:Area/Main/Repository">00FF57</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Conducting polymers</term><term>Current density</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Schottky barriers</term><term>Semiconductor-metal boundaries</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7340N</term><term>7330</term><term>7361P</term><term>7361E</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Polymère conducteur</term><term>Interface métal semiconducteur</term><term>Barrière Schottky</term><term>Densité courant</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The interface between the inorganic semiconductor p-type InP and the conjugated polymer poly(pyrrole) exhibits the electrical characteristics of a Schottky diode. Capacitance-voltage measurements yield an average barrier height of 0.62 ± 0.01 eV at temperature T =298 K. At the same temperature, the empirical quality factor, extracted from current-voltage measurements, is near unity. However, the current-voltage measurements show a deviation from thermionic emission theory as the temperature is reduced, as witnessed by the increase of the quality factor and the curvature in the Richardson plot. Such deviation is best explained by the barrier inhomogeneity model, in which the barrier becomes voltage dependent due to the interaction of a small low-barrier region with a higher surrounding potential, termed the pinch-off effect. Traditional current-voltage models, including image force lowering or an interfacial layer, cannot predict the temperature dependence of the current-voltage data, although thermionic field emission may facilitate current transport in the interfaces with a higher doped InP substrate. Furthermore, the probability of sufficiently energetic incident charge carriers crossing the interface, termed the transmission coefficient, is smaller than that observed in metal Schottky diodes.© 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>90</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Current transport at the p-InP|poly(pyrrole) interface</s1></fA08><fA11 i1="01" i2="1"><s1>JONES (Frank E.)</s1></fA11><fA11 i1="02" i2="1"><s1>DANIELS HAFER (Carrie)</s1></fA11><fA11 i1="03" i2="1"><s1>WOOD (Ben P.)</s1></fA11><fA11 i1="04" i2="1"><s1>DANNER (Robert G.)</s1></fA11><fA11 i1="05" i2="1"><s1>LONERGAN (Mark C.)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry and The Materials Science Institute, University of Oregon, Eugene, Oregon 97403-1253</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>1001-1010</s1></fA20><fA21><s1>2001-07-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0312230</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The interface between the inorganic semiconductor p-type InP and the conjugated polymer poly(pyrrole) exhibits the electrical characteristics of a Schottky diode. Capacitance-voltage measurements yield an average barrier height of 0.62 ± 0.01 eV at temperature T =298 K. At the same temperature, the empirical quality factor, extracted from current-voltage measurements, is near unity. However, the current-voltage measurements show a deviation from thermionic emission theory as the temperature is reduced, as witnessed by the increase of the quality factor and the curvature in the Richardson plot. Such deviation is best explained by the barrier inhomogeneity model, in which the barrier becomes voltage dependent due to the interaction of a small low-barrier region with a higher surrounding potential, termed the pinch-off effect. Traditional current-voltage models, including image force lowering or an interfacial layer, cannot predict the temperature dependence of the current-voltage data, although thermionic field emission may facilitate current transport in the interfaces with a higher doped InP substrate. 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